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Description
Here we consider a model in which the dwell time of the tunneling on a multi-barrier quantum structure based on monolayer graphene is computed. This quantum system is composed by $N$ barriers and $N-1$ wells, at zero temperature, in which the spin-orbit effects and the carrier-phonon interactions are absent. In addition, one assumes that the dimensions of the system in the $x-y$ plane are large enough to neglect the edge effects. The transmission coefficient is calculated and the connection between it and dwell time is established, for different values of the parameters associated with the quantum structure. The results show that the dwell time is sensitive to the variation of some parameters such as the angle of incidence or the system geometry and could be used in the field of optoelectronic devices based on graphene.
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